ETD

• 2D-materials
• gate
• superconductivity

Modern computing technology relies on the CMOS platform, where a gate controls charge transport across a channel connecting two terminals. Despite current miniaturization, power dissipation remains limiting. Hybrid architectures combining semiconductors with superconducting elements promise to increase performance but require gate-controlled superconducting (GCS) devices.

Experiments concerning GCS show that superconducting parameters can be tuned electrostatically. However, metallic screening suppresses the electric field, requiring large gate voltages that cause leakage currents. Many systems are also polycrystalline, with grain boundaries acting as weak links that limit the critical current and reduce gating uniformity.

Two-dimensional materials offer a promising route, as their atomic-scale thickness reduces screening and enables effective electrostatic control. Among them, NbSe2 is a low-Tc superconductor that preserves superconductivity down to the single atomic layer.

This work studies how gating tunes superconductivity in two NbSe2-based devices, with a focus on fabrication methods that maintain material integrity. Low-temperature measurements on devices of different thicknesses show that gating modifies both the normal-state resistance and key superconducting parameters, including critical current, field, and temperature, confirming NbSe2 as a viable tunable superconducting 2D platform.