ETD

• Ballistic Transport
• Conductance Quantization
• Diffusive Transport
• Electric Double Layer
• Finite Difference Method
• Nanowire

We characterize experimentally an electric double layer transistor, based on a 46 nm width InAs nanowire, at liquid helium temperature. We demonstrate a transition from diffusive to ballistic transport regime by means of all-around electrolyte gating, to be ascribed to a tuneable contribution of surface defect scattering. We extract the 1D subband structure and follow its evolution under magnetic field. The experimental results are then compared to theoretical estimates and to numerical simulations of Schrödinger equation by finite difference method.