Tesi etd-07142021-164142 |
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Tipo di tesi
Tesi di laurea magistrale
Autore
BETTI, ALBERTO
Indirizzo email
a.betti8@studenti.unipi.it, alberto.betti@sns.it
URN
etd-07142021-164142
Titolo
Electric double layer gating of low dimensional electron systems in semiconductor nanowires
Dipartimento
INGEGNERIA CIVILE E INDUSTRIALE
Corso di studi
MATERIALS AND NANOTECHNOLOGY
Relatori
relatore Prof. Sorba, Lucia
correlatore Dott. Rossella, Francesco
correlatore Dott. Rossella, Francesco
Parole chiave
- Ballistic Transport
- Conductance Quantization
- Diffusive Transport
- Electric Double Layer
- Finite Difference Method
- Nanowire
Data inizio appello
01/10/2021
Consultabilità
Completa
Riassunto
We characterize experimentally an electric double layer transistor, based on a 46 nm width InAs nanowire, at liquid helium temperature. We demonstrate a transition from diffusive to ballistic transport regime by means of all-around electrolyte gating, to be ascribed to a tuneable contribution of surface defect scattering. We extract the 1D subband structure and follow its evolution under magnetic field. The experimental results are then compared to theoretical estimates and to numerical simulations of Schrödinger equation by finite difference method.
File
| Nome file | Dimensione |
|---|---|
| thesis.pdf | 5.69 Mb |
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