logo SBA

ETD

Archivio digitale delle tesi discusse presso l’Università di Pisa

Tesi etd-07132023-111918


Tipo di tesi
Tesi di dottorato di ricerca
Autore
LUCCHESI, LEONARDO
URN
etd-07132023-111918
Titolo
"Modeling of ballistic transport in nanodevices made of 2D materials heterostructures"
Settore scientifico disciplinare
FIS/03
Corso di studi
FISICA
Relatori
tutor Prof. Iannaccone, Giuseppe
Parole chiave
  • 2d materials
  • ballistic transport
  • bjt
  • contact resistance
  • effective Hamiltonian
  • graphene
  • hbt
  • heterostructure
  • modeling
  • mos2
  • spin
  • tlm
  • transistor
  • transmission line model
  • twisted bilayer graphene
  • wse2
Data inizio appello
28/11/2023
Consultabilità
Non consultabile
Data di rilascio
28/11/2026
Riassunto
Understanding ballistic transport is fundamental for next generation electronics, thus computational modeling is essential for designing future devices. This thesis walks three steps in this direction. First, the introduction of a new device concept: an heterojunction bipolar transistor made of 2D materials. This device is the thinnest transistor concept possible, and we present its proof-of-concept and its figures of merit. Second, we present the Vertically-Ballistic Transmission Line Model, a new multiscale model describing transport across a bilayer structure used as a vertical contact. This model is tuned on few experimental parameters such as mobilities and dopings, and it gives numerous insights on the physics of a van der Waals vertical contact. Lastly, we simulate vertical spin transport in twisted bilayer graphene to look for effects useful for designing spintronic devices.
File