• u-PL
• VLS
• GaAsP
• Quantum dot
• Nanowire

In this thesis a detailed experimental exploration of the morphological and structural characteristics of GaAsP quantum dots embedded in GaP nanowires are presented .
A comprehensive analysis of the growth techniques is provided and the optimal parameters for the growth of both the GaAs stem and GaP segment are founded,elucidating their respective growth mechanisms. Notably, a detailed examination of the GaAsP alloy composition and its tunability is conducted via SEM-EDX analysis to determine the composition and growth processes of the GaAsP quantum dots.Moreover, the evolution of the radial growth of a GaP shell around the nanowire, which acts as a waveguide is investigated.Finally, preliminary measurements of the optical properties by means of µ-photoluminescence of the complete GaAs/GaP/GaAsP/GaP nanowire heterostructure are presented.The findings outlined in this study contribute to a deeper understanding of the growth and characteristics of GaAsP Quantum Dots within GaP Nanowires, offering insights into their potential applications in optoelectronic devices.