• detector
• graphene

This thesis describes the activity to develop an innovative detector, sensitive to minimum ionizing particles, based on the electrical properties of graphene.
In the thesis will be described the simulations needed for the design of the detector prototype (silicon sensor coupled with a graphene layer) that have been electrically characterized in the silicon laboratory of the Pisa INFN.
The silicon sensor is made of a silicon hyper-pure n-type crystal; on the top there are two narrow p+ (about 5 μm) implanted strips, covered with a layer 300 nm-thick of silicon dioxide.
Inside the regions defined by the two implanted strips, four mono-layer of graphene of rectangular shape are placed on top of the dielectric layer.
I made a bi-dimensional simulation in order to estimate the response of the device to a MIP.
I characterized the silicon wafers after their production at FBK to extract information useful for the selection of the most promising silicon sensors.
After the selection, the silicon 1.6x1.6 mm2 dies underwent the transfer of graphene single layers at NEST laboratory.
I found that 15 devices with mono-layers of graphene were working as expected and I measured on them the Dirac points.