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Digital archive of theses discussed at the University of Pisa

 

Thesis etd-05202023-192829


Thesis type
Tesi di dottorato di ricerca
Author
LOVARELLI, GIUSEPPE
URN
etd-05202023-192829
Thesis title
Modeling of quantum transport in devices based on heterostructures of two-dimensional materials
Academic discipline
FIS/03
Course of study
FISICA
Supervisors
tutor Prof. Iannaccone, Giuseppe
Keywords
  • 2d materials
  • ballistic transport
  • common lattice
  • deformation potential approximation
  • electron device simulations
  • field effect transistor
  • graphene
  • landauer
  • lateral heterojunction
  • lateral heterostructure
  • mos2
  • multiscale modeling
  • negf
  • quantum transport
  • self-consistent Schrodinger-Poisson algorithm
  • tight binding
  • van der Waals
  • vertical heterostructure
Graduation session start date
24/05/2023
Availability
Full
Summary
Modern fundamental research in the field of electronics is focused on finding the best combinations of materials that make a device small, scalable, energy-
efficient and fast. Heterostructures of two-dimensional materials are very promising platforms for such electronic devices, as they enable engineering of materials properties and show relatively high mobility. However, because simulating these structures requires incorporating quantum processes and
often ab-initio methods, it is sometimes hard to reproduce experimental setups. This thesis aims to add some more theoretical techniques to the ones available
in the field, in the particular cases of electron transport in both lateral and vertical heterostructures of two-dimensional materials.
Multiscale modelling bringing a tight binding parametrization for the heterostructures is carried out, and by means of either ballistic or non-ballistic NEGF self-consistent Schroedinger-Poisson solvers, the performance of different building blocks for modern electron devices is assessed.
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