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Tesi etd-05082013-195234


Thesis type
Tesi di dottorato di ricerca
Author
COSTANTINO, NICO
URN
etd-05082013-195234
Title
Design and Testing of Electronic Devices for Harsh Environments
Settore scientifico disciplinare
ING-INF/01
Corso di studi
INGEGNERIA
Commissione
tutor Prof. Saponara, Sergio
tutor Prof. Fanucci, Luca
tutor Dott. Magazzù, Guido
Parole chiave
  • Intelligent Power Switch
  • Integrated Circuits
  • High Voltage CMOS
  • High Energy Physics experiments readout
  • automotive electronics
  • architectures and circuits for harsh environments
  • radiation tolerance
  • serial communications
Data inizio appello
24/06/2013;
Consultabilità
completa
Riassunto analitico
In this thesis an overview of the research activity focused on development, design<br>and testing of electronic devices and systems for harsh environments has been<br>reported. The scope of the work has been the design and validation flow of<br>Integrated Circuits operating in two harsh applications: Automotive and High<br>Energy Physics experiments.<br>In order to fulfill the severe operating electrical and environmental conditions of<br>automotive applications, a systematic methodology has been followed in the<br>design of an innovative Intelligent Power Switch: several design solutions have<br>been developed at architectural and circuital level, integrating on-chip selfdiagnostic<br>capabilities and full protection against high voltage and reverse polarity,<br>effects of wiring parasitics, over-current and over-temperature phenomena.<br>Moreover current slope and soft start integrated techniques has ensured low EMI,<br>making the Intelligent Power Switch also configurable to drive different interchangeable<br>loads efficiently. The innovative device proposed has been<br>implemented in a 0.35 μm HV-CMOS technology and embedded in mechatronic<br>3rd generation brush-holder regulator System-on-Chip for an automotive alternator.<br>Electrical simulations and experimental characterization and testing at componentlevel<br>and on-board system-level has proven that the proposed design allows for a<br>compact and smart power switch realization, facing the harshest automotive<br>conditions. The smart driver has been able to supply up to 1.5 A to various types of<br>loads (e.g.: incadescent lamp bulbs, LED), in operating temperatures in the wide<br>range -40 °C to 150 °C, with robustness against high voltage up to 55 V and<br>reverse polarity up to -15 V.<br>The second branch of research activity has been framed within the High Energy<br>Physics area, leading to the development of a general purpose and flexible<br>protocol for the data acquisition and the distribution of Timing, Trigger and Control<br>signals and its implementation in radiation tolerant interfaces in CMOS 130 nm<br>technology. The several features integrated in the protocol has made it suitable for<br>different High Energy Physics experiments: flexibility w.r.t. bandwidth and latency<br>requirements, robustness of critical information against radiation-induced errors,<br>compatibility with different data types, flexibility w.r.t the architecture of the control<br>and readout systems, are the key features of this novel protocol.<br>Innovative radiation hardening techniques have been studied and implemented in<br>the test-chip to ensure the proper functioning in operating environments with a high<br>level of radiation, such as the Large Hadron Collider at CERN in Geneva.<br>An FPGA-based emulator has been developed and, in a first phase, employed for<br>functional validation of the protocol. In a second step, the emulator has been<br>modified as test-bed to assess the Transmitter and Receiver interfaces embedded<br>on the test-chip. An extensive phase of tests has proven the functioning of the<br>interfaces at the three speed options, 4xF, 8xF and 16xF (F = reference clock<br>frequency) in different configurations.<br>Finally, irradiation tests has been performed at CERN X-rays irradiation facility,<br>bearing out the proper behaviour of the interfaces up to 40 Mrad(SiO2).
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