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Tesi etd-04292015-081510


Thesis type
Tesi di dottorato di ricerca
Author
BIAGI, EDOARDO
URN
etd-04292015-081510
Title
Design challenges and innovative solutions in mixed-signal high voltage integrated circuits: case studies for automotive applications
Settore scientifico disciplinare
ING-INF/01
Corso di studi
INGEGNERIA "L. DA VINCI"
Commissione
relatore Prof. Saponara, Sergio
relatore Ing. Serventi, Riccardo
tutor Prof. Fanucci, Luca
Parole chiave
  • motor drives
  • output stage
  • DC-DC
  • automotive electronics
  • high voltage
Data inizio appello
03/05/2015;
Consultabilità
parziale
Data di rilascio
03/05/2018
Riassunto analitico
Integrated Circuits (ICs) are playing a starring role in the automotive market,<br>especially since legal and safety requirements have been introduced to rule vehicles<br>emissions and operation. In addition to that the development of dedicated<br>ICs for automotive applications is pushed not only by the harsh environment<br>and the challenging safety requirements typical of the automotive applications,<br>but also by the increase of the complexity of the electronic equipment within<br>the car, and the need to minimize the lead time of automotive products.<br>In the thesis hot topics typical of electronic systems for automotive applications<br>are introduced, the relative study of the state of the art is presented<br>and the limitations of currently available solutions are highlighted. Finally innovative<br>solutions designed and developed to overcome the limitations of the<br>state of the art are described and particular emphasis is given to performance,<br>quality and safety aspects.<br>The thesis reports the design and validation of battery management systems,<br>high voltage output drivers for sensor-based ICs and motor drives, showing<br>how to fulfill in an effective way the performance, quality and safety targets<br>according to the guidelines and constraints of the latest automotive standards,<br>like ISO26262 and AEC-Q100.<br>The designed ICs have been simulated and manufactured, including layout<br>drawings, in HVCMOS 350nm technology from AMS. The effectiveness and<br>robustness of the proposed circuits has been validated on silicon and corresponded<br>measurement results have been reported.
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